Invention Grant
- Patent Title: Compensated readout of a memristor array, a memristor array readout circuit, and method of fabrication thereof
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Application No.: US15735978Application Date: 2016-06-15
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Publication No.: US10297318B2Publication Date: 2019-05-21
- Inventor: Mohammed Affan Zidan , Hesham Omran , Ahmed Sultan Salem , Khaled Nabil Salama
- Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Applicant Address: SA Thuwal
- Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: SA Thuwal
- Agency: Patent Portfolio Builders PLLC
- International Application: PCT/IB2016/053540 WO 20160615
- International Announcement: WO2016/203397 WO 20161222
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C27/02
Abstract:
A method for readout of a gated memristor array, a memristor array readout circuit and method of fabrication thereof are provided. In the context of the method, the method includes selecting a row of a memristor array associated with a desired cell, measuring the value of the selected memristor row, and selecting a column of a memristor array associated with the desired cell. The selection of the column and selection of the row selects the desired cell. The method also includes measuring the value of the memristor selected row with the selected desired cell and determining the value of the desired cell based on the value of the selected memristor row and the value of the selected memristor row with the selected desired cell.
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