中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.059 seconds)

    GAS SENSOR
    6.
    发明申请
    GAS SENSOR 有权
    气体传感器

    公开(公告)号：US20150020577A1

    公开(公告)日：2015-01-22

    申请号：US14375665

    申请日：2013-01-30

    Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

    Inventor： Ryan Luebke ,  Mohamed Eddaoudi ,  Hesham Omran ,  Youssef Belmabkhout ,  Osama Shekhah ,  Khaled N. Salama

    IPC: G01N27/02 ,  G01N33/00

    CPC classification number: G01N27/02 ,  G01N27/041 ,  G01N27/12 ,  G01N33/0027 ,  G01N33/0031 ,  Y10T29/49117

    Abstract: A gas sensor using a metal organic framework material can be fully integrated with related circuitry on a single substrate. In an on-chip application, the gas sensor can result in an area-efficient fully integrated gas sensor solution. In one aspect, a gas sensor can include a first gas sensing region including a first pair of electrodes, and a first gas sensitive material proximate to the first pair of electrodes, wherein the first gas sensitive material includes a first metal organic framework material.

    Abstract translation: 使用金属有机骨架材料的气体传感器可以与单个基板上的相关电路完全集成。 在片上应用中，气体传感器可以产生全面集成的气体传感器解决方案。 在一个方面，气体传感器可以包括包括第一对电极的第一气体感测区域和靠近第一对电极的第一气体敏感材料，其中第一气体敏感材料包括第一金属有机骨架材料。

    Single-readout high-density memristor crossbar
    7.
    发明授权
    Single-readout high-density memristor crossbar 有权

    公开(公告)号：US10340001B2

    公开(公告)日：2019-07-02

    申请号：US15751650

    申请日：2016-08-23

    Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

    Inventor： Mohammed Affan Zidan ,  Hesham Omran ,  Rawan Naous ,  Ahmed Sultan Salem ,  Khaled Nabil Salama

    IPC: G11C13/00 ,  H01L27/24 ,  H01L45/00

    Abstract: Methods are provided for mitigating problems caused by sneak-paths current during memory cell access in gateless arrays. Example methods contemplated herein utilize adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer memory system to address this sneak-paths problem. The method of the invention is a method for reading a target memory cell located at an intersection of a target row of a gateless array and a target column of the gateless array, the method comprising: —reading a value of the target memory cell; and—calculating an actual value of the target memory cell based on the read value of the memory cell and a component of the read value caused by sneak path current. Utilizing either an “initial bits” strategy or a “dummy bits” strategy in order to calculate the component of the read value caused by sneak path current, example embodiments significantly reduce the number of memory accesses pixel for an array readout. In addition, these strategies consume an order of magnitude less power in comparison to alternative state-of-the-art readout techniques.

    SINGLE-READOUT HIGH-DENSITY MEMRISTOR CROSSBAR
    9.
    发明申请
    SINGLE-READOUT HIGH-DENSITY MEMRISTOR CROSSBAR 审中-公开

    公开(公告)号：US20180233196A1

    公开(公告)日：2018-08-16

    申请号：US15751650

    申请日：2016-08-23

    Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

    Inventor： Mohammed Affan Zidan ,  Hesham Omran ,  Rawan Naous ,  Ahmed Sultan Salem ,  Khaled Nabil Salama

    IPC: G11C13/00 ,  H01L27/24 ,  H01L45/00

    CPC classification number: G11C13/004 ,  G11C13/0009 ,  G11C13/0033 ,  G11C2013/005 ,  G11C2013/0057 ,  G11C2213/70 ,  H01L27/2481 ,  H01L45/1206

    Abstract: Methods are provided for mitigating problems caused by sneak-paths current during memory cell access in gateless arrays. Example methods contemplated herein utilize adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer memory system to address this sneak-paths problem. The method of the invention is a method for reading a target memory cell located at an intersection of a target row of a gateless array and a target column of the gateless array, the method comprising: —reading a value of the target memory cell; and —calculating an actual value of the target memory cell based on the read value of the memory cell and a component of the read value caused by sneak path current. Utilizing either an “initial bits” strategy or a “dummy bits” strategy in order to calculate the component of the read value caused by sneak path current, example embodiments significantly reduce the number of memory accesses pixel for an array readout. In addition, these strategies consume an order of magnitude less power in comparison to alternative state-of-the-art readout techniques.

Patent Agency Ranking