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    Single-readout high-density memristor crossbar
    2.
    发明授权
    Single-readout high-density memristor crossbar 有权

    公开(公告)号：US10340001B2

    公开(公告)日：2019-07-02

    申请号：US15751650

    申请日：2016-08-23

    Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

    Inventor： Mohammed Affan Zidan ,  Hesham Omran ,  Rawan Naous ,  Ahmed Sultan Salem ,  Khaled Nabil Salama

    IPC: G11C13/00 ,  H01L27/24 ,  H01L45/00

    Abstract: Methods are provided for mitigating problems caused by sneak-paths current during memory cell access in gateless arrays. Example methods contemplated herein utilize adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer memory system to address this sneak-paths problem. The method of the invention is a method for reading a target memory cell located at an intersection of a target row of a gateless array and a target column of the gateless array, the method comprising: —reading a value of the target memory cell; and—calculating an actual value of the target memory cell based on the read value of the memory cell and a component of the read value caused by sneak path current. Utilizing either an “initial bits” strategy or a “dummy bits” strategy in order to calculate the component of the read value caused by sneak path current, example embodiments significantly reduce the number of memory accesses pixel for an array readout. In addition, these strategies consume an order of magnitude less power in comparison to alternative state-of-the-art readout techniques.

    SINGLE-READOUT HIGH-DENSITY MEMRISTOR CROSSBAR
    4.
    发明申请
    SINGLE-READOUT HIGH-DENSITY MEMRISTOR CROSSBAR 审中-公开

    公开(公告)号：US20180233196A1

    公开(公告)日：2018-08-16

    申请号：US15751650

    申请日：2016-08-23

    Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

    Inventor： Mohammed Affan Zidan ,  Hesham Omran ,  Rawan Naous ,  Ahmed Sultan Salem ,  Khaled Nabil Salama

    IPC: G11C13/00 ,  H01L27/24 ,  H01L45/00

    CPC classification number: G11C13/004 ,  G11C13/0009 ,  G11C13/0033 ,  G11C2013/005 ,  G11C2013/0057 ,  G11C2213/70 ,  H01L27/2481 ,  H01L45/1206

    Abstract: Methods are provided for mitigating problems caused by sneak-paths current during memory cell access in gateless arrays. Example methods contemplated herein utilize adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer memory system to address this sneak-paths problem. The method of the invention is a method for reading a target memory cell located at an intersection of a target row of a gateless array and a target column of the gateless array, the method comprising: —reading a value of the target memory cell; and —calculating an actual value of the target memory cell based on the read value of the memory cell and a component of the read value caused by sneak path current. Utilizing either an “initial bits” strategy or a “dummy bits” strategy in order to calculate the component of the read value caused by sneak path current, example embodiments significantly reduce the number of memory accesses pixel for an array readout. In addition, these strategies consume an order of magnitude less power in comparison to alternative state-of-the-art readout techniques.

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