Invention Grant
- Patent Title: Low-temperature atomic layer deposition of boron nitride and BN structures
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Application No.: US15674108Application Date: 2017-08-10
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Publication No.: US10297441B2Publication Date: 2019-05-21
- Inventor: Steven Wolf , Mary Edmonds , Andrew C. Kummel , Srinivas D. Nemani , Ellie Y. Yieh
- Applicant: Applied Materials, Inc. , The Regents of the University of California
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/31 ; H01L21/469 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L21/02 ; H01L29/51 ; C23C16/46 ; C23C16/455 ; C23C16/34
Abstract:
Methods of the disclosure include a BN ALD process at low temperatures using a reactive nitrogen precursor, such as thermal N2H4, and a boron containing precursor, which allows for the deposition of ultra thin (less than 5 nm) films with precise thickness and composition control. Methods are self-limiting and provide saturating atomic layer deposition (ALD) of a boron nitride (BN) layer on various semiconductors and metallic substrates.
Public/Granted literature
- US20180040476A1 LOW-TEMPERATURE ATOMIC LAYER DEPOSITION OF BORON NITRIDE AND BN STRUCTURES Public/Granted day:2018-02-08
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