Invention Grant
- Patent Title: Copper seed layer and nickel-tin microbump structures
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Application No.: US15267065Application Date: 2016-09-15
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Publication No.: US10297563B2Publication Date: 2019-05-21
- Inventor: Rahul Jain , Kyu Oh Lee , Amanda E. Schuckman , Steve S. Cho
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
Techniques and mechanisms for providing effective connectivity with surface level microbumps on an integrated circuit package substrate. In an embodiment, different metals are variously electroplated to form a microbump which extends through a surface-level dielectric of a substrate to a seed layer including copper. The microbump includes nickel and tin, wherein the nickel aids in mitigating an absorption of seed layer copper. In another embodiment, the microbump has a mass fraction of tin, or a mass fraction of nickel, that is different in various regions along a height of the microbump.
Public/Granted literature
- US20180076161A1 NICKEL-TIN MICROBUMP STRUCTURES AND METHOD OF MAKING SAME Public/Granted day:2018-03-15
Information query
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