Embedding magnetic material, in a cored or coreless semiconductor package

    公开(公告)号:US11355459B2

    公开(公告)日:2022-06-07

    申请号:US15982652

    申请日:2018-05-17

    Abstract: Techniques for fabricating a semiconductor package having magnetic materials embedded therein are described. For one technique, fabrication of package includes: forming a pad and a conductive line on a build-up layer; forming a raised pad structure on the build-up layer, the raised pad comprising a pillar structure on the pad; encapsulating the conductive line and the raised pad structure in a magnetic film comprising one or more magnetic fillers; planarizing a top surface of the magnetic film until top surfaces of the raised pad structure and the magnetic film are co-planar; depositing a primer layer on the top surfaces; removing one or more portions of the primer layer above the raised pad structure to create an opening; and forming a via in the opening on the raised pad structure. The primer layer may comprise one or more of a build-up layer, a photoimageable dielectric layer, and a metal mask.

    Die interconnect substrates, a semiconductor device and a method for forming a die interconnect substrate

    公开(公告)号:US11139264B2

    公开(公告)日:2021-10-05

    申请号:US16586820

    申请日:2019-09-27

    Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.

    Die interconnect substrates, a semiconductor device and a method for forming a die interconnect substrate

    公开(公告)号:US10468374B2

    公开(公告)日:2019-11-05

    申请号:US15475175

    申请日:2017-03-31

    Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.

    Die interconnect substrates, a semiconductor device and a method for forming a die interconnect substrate

    公开(公告)号:US12224264B2

    公开(公告)日:2025-02-11

    申请号:US18385167

    申请日:2023-10-30

    Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.

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