Invention Grant
- Patent Title: Semiconductor device assembly with heat transfer structure formed from semiconductor material
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Application No.: US15693750Application Date: 2017-09-01
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Publication No.: US10297577B2Publication Date: 2019-05-21
- Inventor: Sameer S. Vadhavkar , Jaspreet S. Gandhi , James M. Derderian
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/373 ; H01L23/40 ; H01L23/367 ; H01L23/00 ; H01L21/78 ; H01L25/00 ; H01L25/18 ; H01L23/538

Abstract:
Semiconductor device assemblies with heat transfer structures formed from semiconductor materials are disclosed herein. In one embodiment, a semiconductor device assembly can include a thermal transfer structure formed from a semiconductor substrate. The thermal transfer structure includes an inner region, an outer region projecting from the inner region, and a cavity defined in the outer region by the inner and outer regions. The semiconductor device assembly further includes a stack of first semiconductor dies in the cavity, and a second semiconductor die attached to the outer region of the thermal transfer structure and enclosing the stack of first semiconductor dies within the cavity.
Public/Granted literature
- US20170365584A1 SEMICONDUCTOR DEVICE ASSEMBLY WITH HEAT TRANSFER STRUCTURE FORMED FROM SEMICONDUCTOR MATERIAL Public/Granted day:2017-12-21
Information query
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