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    Apparatuses and methods for semiconductor die heat dissipation
    4.
    发明授权
    Apparatuses and methods for semiconductor die heat dissipation 有权

    公开(公告)号：US10541229B2

    公开(公告)日：2020-01-21

    申请号：US14626575

    申请日：2015-02-19

    申请人： MICRON TECHNOLOGY, INC.

    发明人： Sameer S. Vadhavkar ,  Xiao Li ,  Anilkumar Chandolu

    IPC分类号： H01L23/34 ,  H01L25/065 ,  H01L23/367

    摘要： Apparatuses and methods for semiconductor die heat dissipation are described. For example, an apparatus for semiconductor die heat dissipation may include a substrate and a heat spreader. The substrate may include a thermal interface layer disposed on a surface of the substrate, such as disposed between the substrate and the heat spreader. The heat spreader may include a plurality of substrate-facing protrusions in contact with the thermal interface layer, wherein the plurality of substrate-facing protrusions are disposed at least partially through the thermal interface layer.

    Semiconductor devices with underfill control features, and associated systems and methods
    5.
    发明授权
    Semiconductor devices with underfill control features, and associated systems and methods 有权

    公开(公告)号：US10424553B2

    公开(公告)日：2019-09-24

    申请号：US15339693

    申请日：2016-10-31

    申请人： Micron Technology, Inc.

    发明人： Suresh Yeruva ,  Kyle K. Kirby ,  Owen R. Fay ,  Sameer S. Vadhavkar

    IPC分类号： H01L23/00 ,  H01L23/24 ,  H01L21/56 ,  H01L23/31

    摘要： Semiconductor devices with underfill control features, and associated systems and methods. A representative system includes a substrate having a substrate surface and a cavity in the substrate surface, and a semiconductor device having a device surface facing toward the substrate surface. The semiconductor device further includes at least one circuit element electrically coupled to a conductive structure. The conductive structure is electrically connected to the substrate, and the semiconductor device further has a non-conductive material positioned adjacent the conductive structure and aligned with the cavity of the substrate. An underfill material is positioned between the substrate and the semiconductor device. In other embodiments, in addition to or in lieu of the con-conductive material, a first conductive structure is connected within the cavity, and a second conductive structure connected outside the cavity. The first conductive structure extends away from the device surface a greater distance than does the second conductive structure.

    Pillar-last methods for forming semiconductor devices
    9.
    发明授权
    Pillar-last methods for forming semiconductor devices 有权

    公开(公告)号：US10957625B2

    公开(公告)日：2021-03-23

    申请号：US15858501

    申请日：2017-12-29

    申请人： Micron Technology, Inc.

    发明人： Anilkumar Chandolu ,  Wayne H. Huang ,  Sameer S. Vadhavkar

    IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L25/065 ,  H01L21/683 ,  H01L23/31

    摘要： Semiconductor devices having one or more vias filled with an electrically conductive material are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate having a first side, a plurality of circuit elements proximate to the first side, and a second side opposite the first side. A via can extend between the first and second sides, and a conductive material in the via can extend beyond the second side of the substrate to define a projecting portion of the conductive material. The semiconductor device can have a tall conductive pillar formed over the second side and surrounding the projecting portion of the conductive material, and a short conductive pad formed over the first side and electrically coupled to the conductive material in the via.

    SEMICONDUCTOR DEVICES WITH UNDERFILL CONTROL FEATURES, AND ASSOCIATED SYSTEMS AND METHODS
    10.
    发明申请
    SEMICONDUCTOR DEVICES WITH UNDERFILL CONTROL FEATURES, AND ASSOCIATED SYSTEMS AND METHODS 审中-公开

    公开(公告)号：US20190371755A1

    公开(公告)日：2019-12-05

    申请号：US16541449

    申请日：2019-08-15

    申请人： Micron Technology, Inc.

    发明人： Suresh Yeruva ,  Kyle K. Kirby ,  Owen R. Fay ,  Sameer S. Vadhavkar

    IPC分类号： H01L23/00 ,  H01L23/24 ,  H01L21/56

    摘要： Semiconductor devices with underfill control features, and associated systems and methods. A representative system includes a substrate having a substrate surface and a cavity in the substrate surface, and a semiconductor device having a device surface facing toward the substrate surface. The semiconductor device further includes at least one circuit element electrically coupled to a conductive structure. The conductive structure is electrically connected to the substrate, and the semiconductor device further has a non-conductive material positioned adjacent the conductive structure and aligned with the cavity of the substrate. An underfill material is positioned between the substrate and the semiconductor device. In other embodiments, in addition to or in lieu of the con-conductive material, a first conductive structure is connected within the cavity, and a second conductive structure connected outside the cavity. The first conductive structure extends away from the device surface a greater distance than does the second conductive structure.