- 专利标题： Dual-curvature cavity for epitaxial semiconductor growth
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申请号： US15795879申请日： 2017-10-27
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公开(公告)号： US10297675B1公开(公告)日： 2019-05-21
- 发明人: Alina Vinslava , Hsien-Ching Lo , Yongjun Shi , Jianwei Peng , Jianghu Yan , Yi Qi
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Canyon
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Canyon
- 代理机构： Thompson Hine LLP
- 代理商 Francois Pagette
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/02 ; H01L29/66 ; H01L21/3065 ; H01L29/78 ; H01L29/161 ; H01L29/16 ; H01L29/165 ; H01L29/08
摘要：
Methods of forming a field-effect transistor and structures for a field-effect transistor. A gate structure is formed that overlaps with a channel region in a semiconductor fin. The semiconductor fin is etched with a first etching process to form a first cavity extending into the semiconductor fin adjacent to the channel region. The semiconductor fin is etched with a second etching process to form a second cavity that is volumetrically smaller than the first cavity and that adjoins the first cavity.
公开/授权文献
- US20190131433A1 DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH 公开/授权日：2019-05-02
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