Invention Grant
- Patent Title: Transparent conductive film and method for producing the same
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Application No.: US14914108Application Date: 2015-04-28
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Publication No.: US10303284B2Publication Date: 2019-05-28
- Inventor: Nozomi Fujino , Tomotake Nashiki , Daiki Kato , Hironobu Machinaga , Kazuaki Sasa , Eri Ueda , Tomoya Matsuda
- Applicant: NITTO DENKO CORPORATION
- Applicant Address: JP Ibaraki-shi
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Ibaraki-shi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2014-093487 20140430; JP2015-090642 20150427
- International Application: PCT/JP2015/062820 WO 20150428
- International Announcement: WO2015/166946 WO 20151105
- Main IPC: G06F3/041
- IPC: G06F3/041 ; C23C14/35 ; G06F3/045 ; H01B5/14 ; G06F3/044 ; C23C14/08 ; C23C14/58 ; B32B9/00 ; C23C14/02 ; C23C14/56

Abstract:
There is provided a transparent conductive film achieving low resistance characteristics of a transparent conductive layer. The present invention provides a transparent conductive film including: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate by means of a sputtering method using a sputtering gas including argon, wherein an existing atomic amount of argon atoms in the transparent conductive layer is 0.24 atomic % or less; an existing atomic amount of hydrogen atoms in the transparent conductive layer is 13×1020 atoms/cm3 or less; and the transparent conductive layer has a specific resistance of 1.1×10−4 Ω·cm or more and 2.8×10−4 Ω·cm or less.
Public/Granted literature
- US20170038889A1 TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING THE SAME Public/Granted day:2017-02-09
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