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公开(公告)号：US10303284B2
公开(公告)日：2019-05-28
申请号：US14914108
申请日：2015-04-28
Applicant: NITTO DENKO CORPORATION
Inventor： Nozomi Fujino , Tomotake Nashiki , Daiki Kato , Hironobu Machinaga , Kazuaki Sasa , Eri Ueda , Tomoya Matsuda
IPC: G06F3/041 , C23C14/35 , G06F3/045 , H01B5/14 , G06F3/044 , C23C14/08 , C23C14/58 , B32B9/00 , C23C14/02 , C23C14/56
Abstract: There is provided a transparent conductive film achieving low resistance characteristics of a transparent conductive layer. The present invention provides a transparent conductive film including: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate by means of a sputtering method using a sputtering gas including argon, wherein an existing atomic amount of argon atoms in the transparent conductive layer is 0.24 atomic % or less; an existing atomic amount of hydrogen atoms in the transparent conductive layer is 13×1020 atoms/cm3 or less; and the transparent conductive layer has a specific resistance of 1.1×10−4 Ω·cm or more and 2.8×10−4 Ω·cm or less.
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2.发明申请公开(公告)号：US20220341024A1
公开(公告)日：2022-10-27
申请号：US17764909
申请日：2020-09-16
Applicant: NITTO DENKO CORPORATION
Inventor： Kyotaro Yamada , Toshihiro Tsurusawa , Hironobu Machinaga , Motoki Haishi , Eri Ueda
Abstract: A transparent conductive film (3) includes a polycrystal (31). The polycrystal (31) has grains (32). The grains (32) have an average value Df of a maximum Feret diameter of 160 to 400 nm.
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公开(公告)号：US10002687B2
公开(公告)日：2018-06-19
申请号：US14905997
申请日：2015-03-11
Applicant: NITTO DENKO CORPORATION
Inventor： Rie Kawakami , Daiki Kato , Kazuaki Sassa , Hironobu Machinaga , Tsukasa Miyazaki , Eri Ueda
IPC: B32B7/00 , B32B27/06 , B32B27/08 , H01B1/06 , H01B1/08 , H01B3/30 , H01B5/14 , H01B3/10 , H01B3/38 , H01B3/42 , H01B3/44 , C23C14/08 , G06F3/041
CPC classification number: H01B5/14 , B32B7/02 , C23C14/086 , C23C14/10 , G06F3/041 , H01B3/10 , H01B3/301 , H01B3/305 , H01B3/306 , H01B3/307 , H01B3/38 , H01B3/423 , H01B3/426 , H01B3/427 , H01B3/442 , H01B3/447 , Y10T428/24975 , Y10T428/265
Abstract: A transparent conductive film 1 includes a transparent substrate 2; a first optical adjustment layer 4 disposed on one side in the thickness direction of the transparent substrate 2 and made of a resin layer; an inorganic substance layer 5 disposed on one side in the thickness direction of the first optical adjustment layer 4 so as to make contact with the first optical adjustment layer 4; and a transparent conductive layer 6 disposed on one side in the thickness direction of the inorganic substance layer 5. The inorganic substance layer 5 has a thickness of 10 nm or less, and the surface of the one side in the thickness direction of the transparent conductive layer 6 has a surface roughness of 1.40 nm or less.
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公开(公告)号：US20170038889A1
公开(公告)日：2017-02-09
申请号：US14914108
申请日：2015-04-28
Applicant: NITTO DENKO CORPORATION
Inventor： Nozomi Fujino , Tomotake Nashiki , Daiki Kato , Hironobu Machinaga , Kazuaki Sasa , Eri Ueda , Tomoya Matsuda
CPC classification number: G06F3/0416 , C23C14/024 , C23C14/086 , C23C14/35 , C23C14/564 , C23C14/5806 , G06F3/041 , G06F3/044 , G06F3/045 , G06F2203/04103 , H01B5/14
Abstract: There is provided a transparent conductive film achieving low resistance characteristics of a transparent conductive layer. The present invention provides a transparent conductive film including: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate by means of a sputtering method using a sputtering gas including argon, wherein an existing atomic amount of argon atoms in the transparent conductive layer is 0.24 atomic % or less; an existing atomic amount of hydrogen atoms in the transparent conductive layer is 13×1020 atoms/cm3 or less; and the transparent conductive layer has a specific resistance of 1.1×10−4 Ω·cm or more and 2.8×10—4 Ω·cm or less.
Abstract translation: 提供了实现透明导电层的低电阻特性的透明导电膜。 本发明提供一种透明导电膜，包括：聚合物膜基材; 以及通过使用包括氩的溅射气体的溅射法在所述聚合物膜基材的至少一个表面上形成的透明导电层，其中所述透明导电层中原有的氩原子数为0.24原子％以下; 透明导电层中现有原子量的氢原子数为13×1020原子/ cm3以下; 透明导电层的电阻率为1.1×10 -4Ω·cm以上且2.8×10 -4Ω·cm以下。
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公开(公告)号：US11806980B2
公开(公告)日：2023-11-07
申请号：US16621066
申请日：2018-03-27
Applicant: NITTO DENKO CORPORATION
Inventor： Kazuto Yamagata , Hironobu Machinaga , Eri Ueda , Hiroichi Ukei , Takehiro Ui
IPC: B32B7/025 , B32B15/20 , B32B15/082 , B32B27/30 , B32B27/36 , C23C14/08 , C23C14/35 , H05K9/00 , B32B27/08
CPC classification number: B32B7/025 , B32B15/082 , B32B27/308 , B32B27/36 , C23C14/086 , C23C14/35 , H05K9/0088 , B32B15/20 , B32B27/08 , B32B2250/03 , B32B2255/10 , B32B2255/205 , B32B2307/202 , B32B2307/204 , B32B2307/212
Abstract: An electromagnetic wave absorber (1) includes a dielectric layer (10), a resistive layer (20), and an electrically conductive layer (30). The resistive layer (20) is disposed on one principal surface of the dielectric layer (10). The electrically conductive layer (30) is disposed on the other principal surface of the dielectric layer (10) and has a sheet resistance lower than a sheet resistance of the resistive layer (20). The resistive layer (20) has a sheet resistance of 200 to 600Ω/□. When the resistive layer (20) is subjected to an immersion treatment in which the resistive layer (20) is immersed in a 5 weight % aqueous solution of NaOH for 5 minutes, an absolute value of a difference between a sheet resistance of the resistive layer (20) before the immersion treatment and a sheet resistance of the resistive layer (20) after the immersion treatment is less than 100Ω/□.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20200207059A1
公开(公告)日：2020-07-02
申请号：US16621066
申请日：2018-03-27
Applicant: NITTO DENKO CORPORATION
Inventor： Kazuto Yamagata , Hironobu Machinaga , Eri Ueda , Hiroichi Ukei , Takehiro Ui
Abstract: An electromagnetic wave absorber (1) includes a dielectric layer (10), a resistive layer (20), and an electrically conductive layer (30). The resistive layer (20) is disposed on one principal surface of the dielectric layer (10). The electrically conductive layer (30) is disposed on the other principal surface of the dielectric layer (10) and has a sheet resistance lower than a sheet resistance of the resistive layer (20). The resistive layer (20) has a sheet resistance of 200 to 600Ω/□. When the resistive layer (20) is subjected to an immersion treatment in which the resistive layer (20) is immersed in a 5 weight % aqueous solution of NaOH for 5 minutes, an absolute value of a difference between a sheet resistance of the resistive layer (20) before the immersion treatment and a sheet resistance of the resistive layer (20) after the immersion treatment is less than 100Ω/□.
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公开(公告)号：US11933997B2
公开(公告)日：2024-03-19
申请号：US16497149
申请日：2018-03-26
Applicant: NITTO DENKO CORPORATION
Inventor： Yosuke Nakanishi , Eri Ueda , Hironobu Machinaga , Yutaka Ohmori
IPC: G02B5/28 , B32B7/12 , C03C17/245 , E06B9/24
CPC classification number: G02B5/282 , B32B7/12 , C03C17/245 , E06B9/24 , C03C2217/231 , C03C2217/948 , C03C2218/156 , E06B2009/2417
Abstract: A heat-ray-transmission-controllable, light-transmissive base material is provided that includes a light-transmissive insolation-cutting unit configured to control transmission of light in at least a part of wavelength regions among wavelength regions of visible light and near-infrared light; and a transparent conductive oxide layer disposed over the light-transmissive insolation-cutting unit, containing a transparent conductive oxide.
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公开(公告)号：US20190233939A1
公开(公告)日：2019-08-01
申请号：US16378775
申请日：2019-04-09
Applicant: NITTO DENKO CORPORATION
Inventor： Kodai Miyamoto , Kazuaki Sasa , Hironobu Machinaga , Eri Ueda , Manami Kurose , Tomotake Nashiki
CPC classification number: C23C14/58 , B32B7/02 , B32B9/00 , C23C14/08 , C23C14/086 , C23C14/35 , C23C14/5806 , H01B1/02 , H01B3/426 , H01B3/427 , H01L31/022466
Abstract: A transparent conductive film includes a crystalline transparent conductive layer obtained by forming an amorphous transparent conductive layer on a polymeric film substrate by sputtering, and crystallizing the amorphous transparent conductive layer. Defining that the amorphous transparent conductive layer has a carrier density represented by na×1019 and Hall mobility represented by μa, that the crystalline transparent conductive layer has a carrier density represented by nc×1019 and Hall mobility represented by μc, and that a length of motion L is represented by {(nc−na)2+(μc−μa)}1/2, the amorphous transparent conductive layer before the crystallizing process has a carrier density na×1019 of (10−60)×1019/cm3 and Hall mobility μa of 10-25 cm2/V·s, and the crystalline transparent conductive layer after the crystallizing process has a carrier density nc×1019 of (80−150)×1019/cm3 and Hall mobility μc of 20-40 cm2/V·s, and the length of motion L is 50-150.
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公开(公告)号：US20170051398A1
公开(公告)日：2017-02-23
申请号：US15307610
申请日：2015-04-28
Applicant: NITTO DENKO CORPORATION
Inventor： Nozomi Fujino , Tomotake Nashiki , Daiki Kato , Hironobu Machinaga , Kazuaki Sasa , Eri Ueda , Tomoya Matsuda , Rie Kawakami
CPC classification number: C23C14/354 , B32B9/00 , C23C14/024 , C23C14/086 , C23C14/10 , C23C14/35 , C23C14/562 , C23C14/5806 , G06F3/044 , G06F2203/04103 , H01B1/08 , H01B5/14
Abstract: There is provided a transparent conductive film achieving low resistance characteristics of a transparent conductive layer. The present invention provides a transparent conductive film including: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate, wherein the transparent conductive film includes an inorganic undercoat layer formed by means of a vacuum film-forming method between the polymer film substrate and the transparent conductive layer, and an existing atomic amount of carbon atoms in the transparent conductive layer is 3×1020 atoms/cm3 or less.
Abstract translation: 提供了实现透明导电层的低电阻特性的透明导电膜。 本发明提供一种透明导电膜，包括：聚合物膜基材; 以及形成在所述聚合物膜基材的至少一个表面上的透明导电层，其中所述透明导电膜包括通过所述聚合物膜基板和所述透明导电层之间的真空成膜法形成的无机底涂层，以及 透明导电层中原子量的原子量为3×1020原子/ cm3以下。
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公开(公告)号：US20240032268A1
公开(公告)日：2024-01-25
申请号：US18255131
申请日：2021-11-24
Applicant: NITTO DENKO CORPORATION
Inventor： Yosuke Nakanishi , Eri Ueda , Hironobu Machinaga
IPC: H05K9/00
CPC classification number: H05K9/0088 , H05K9/0084
Abstract: A radio wave absorber 1a includes a resistive layer 10, a reflector 30, and a dielectric layer 20. The resistive layer 10 includes multilayer carbon nanotubes 11. Moreover, the resistive layer 10 has a specific resistance of 1.5 Ω·cm or less. The reflector 30 reflects a radio wave. The dielectric layer 20 is disposed between the resistive layer and the reflector in a thickness direction of the resistive layer 10.
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