- 专利标题： Semiconductor device and method
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申请号： US15170487申请日： 2016-06-01
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公开(公告)号： US10304700B2公开(公告)日： 2019-05-28
- 发明人: Zi-Jheng Liu , Yu-Hsiang Hu , Jo-Lin Lan , Shih-Hao Liao , Chen-Cheng Kuo , Hung-Jui Kuo , Chung-Shi Liu , Chen-Hua Yu , Meng-Wei Chou
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/56
- IPC分类号： H01L21/56 ; H01L23/00 ; H01L25/10 ; H01L25/00
摘要：
A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.
公开/授权文献
- US20170110421A1 Semiconductor Device and Method 公开/授权日：2017-04-20
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