Invention Grant
- Patent Title: Method and apparatus for improved etch stop layer or hard mask layer of a memory device
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Application No.: US15627676Application Date: 2017-06-20
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Publication No.: US10304749B2Publication Date: 2019-05-28
- Inventor: Christopher W. Petz , Philip M. Campbell , Wei Yeeng Ng , Kunal Bhaskar Shrotri , Saurabh Keshav , John Mark Meldrim , Prakash Rau Mokhna Rau , Tom Jibu John
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alliance IP, LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/29 ; H01L27/11524 ; H01L27/1157
Abstract:
In one embodiment, an apparatus comprises an etch stop layer comprising Aluminum Oxide and one or more of Hafnium, Silicon, or Magnesium; and a channel formed through one or more layers deposited over the etch stop layer, the channel extending to the etch stop layer.
Public/Granted literature
- US20180366386A1 METHOD AND APPARATUS FOR IMPROVED ETCH STOP LAYER OR HARD MASK LAYER OF A MEMORY DEVICE Public/Granted day:2018-12-20
Information query
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