公开(公告)号：US20180366386A1

公开(公告)日：2018-12-20

申请号：US15627676

申请日：2017-06-20

Applicant: Intel Corporation

Inventor： Christopher W. Petz ,  Philip M. Campbell ,  Wei Yeeng Ng ,  Kunal Bhaskar Shrotri ,  Saurabh Keshav ,  John Mark Meldrim ,  Prakash Rau Mokhna Rau ,  Tom Jibu John

IPC: H01L23/29 ,  H01L27/11524 ,  H01L27/1157 ,  H01L21/02

CPC classification number: H01L23/291 ,  H01L21/02145 ,  H01L21/02194 ,  H01L21/02266 ,  H01L27/11524 ,  H01L27/1157

Abstract: In one embodiment, an apparatus comprises an etch stop layer comprising Aluminum Oxide and one or more of Hafnium, Silicon, or Magnesium; and a channel formed through one or more layers deposited over the etch stop layer, the channel extending to the etch stop layer.

公开(公告)号：US10304749B2

公开(公告)日：2019-05-28

申请号：US15627676

申请日：2017-06-20

Applicant: Intel Corporation

Inventor： Christopher W. Petz ,  Philip M. Campbell ,  Wei Yeeng Ng ,  Kunal Bhaskar Shrotri ,  Saurabh Keshav ,  John Mark Meldrim ,  Prakash Rau Mokhna Rau ,  Tom Jibu John

IPC: H01L21/02 ,  H01L23/29 ,  H01L27/11524 ,  H01L27/1157

Abstract: In one embodiment, an apparatus comprises an etch stop layer comprising Aluminum Oxide and one or more of Hafnium, Silicon, or Magnesium; and a channel formed through one or more layers deposited over the etch stop layer, the channel extending to the etch stop layer.