Invention Grant
- Patent Title: Semiconductor package having reduced internal power pad pitch
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Application No.: US15814736Application Date: 2017-11-16
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Publication No.: US10304792B1Publication Date: 2019-05-28
- Inventor: Shiqun Gu , Hongying Zhang , HongLiang Cai
- Applicant: Futurewei Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: Futurewei Technologies, Inc.
- Current Assignee: Futurewei Technologies, Inc.
- Current Assignee Address: US TX Plano
- Agency: Garlick & Markison
- Agent Bruce Garlick
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/00 ; H01L21/768

Abstract:
A packaged Integrated Circuit (IC) includes an IC and a package. The package has a bottom dielectric layer and a plurality of redistribution layers (RDLs) formed on the bottom dielectric layer. Each the RDLs includes patterned conductors, a dielectric layer, and a plurality of vias that extend between the patterned conductors to a differing RDL or to external connections. The package includes a plurality of package pads that have a first lateral separation pitch. The IC includes a plurality of IC pads that electrically connect to the plurality of package pads that have a first lateral separation pitch. The package also includes a plurality of Printed Circuit Board (PCB) pads that extend through the bottom dielectric layer and contact the plurality of patterned conductors of the first RDL. Power PCB pads and ground PCB pads of the plurality of PCB pads have a second lateral separation pitch that exceeds the first lateral separation pitch.
Public/Granted literature
- US20190148323A1 SEMICONDUCTOR PACKAGE HAVING REDUCED INTERNAL POWER PAD PITCH Public/Granted day:2019-05-16
Information query
IPC分类: