Invention Grant
- Patent Title: Cross-point architecture for spin-transfer torque magnetoresistive random access memory with spin orbit writing
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Application No.: US15067087Application Date: 2016-03-10
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Publication No.: US10305026B2Publication Date: 2019-05-28
- Inventor: Dmytro Apalkov , Vladimir Nikitin
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/08 ; H01L43/02 ; H01L43/10 ; H01L27/22 ; H01L43/12
Abstract:
A magnetic memory cell includes: a first spin-orbit interaction active layer; a first magnetic free layer on the first spin-orbit interaction active layer, the first magnetic free layer having a changeable magnetization; a first nonmagnetic spacer layer on the first magnetic free layer; a reference layer having a fixed magnetization on the first nonmagnetic spacer layer; a second nonmagnetic spacer layer on the reference layer; a second magnetic free layer on the second nonmagnetic spacer layer, the second magnetic free layer having a changeable magnetization; and a second spin-orbit interaction active layer on the second magnetic free layer.
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