- 专利标题： Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions
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申请号： US15293782申请日： 2016-10-14
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公开(公告)号： US10311928B2公开(公告)日： 2019-06-04
- 发明人: Boyoung Seo , Yongkyu Lee , Gwanhyeob Koh , Choong Jae Lee
- 申请人： Boyoung Seo , Yongkyu Lee , Gwanhyeob Koh , Choong Jae Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2015-0144117 20151015; KR10-2015-0160551 20151116
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C17/02 ; G11C11/16 ; H01L27/22 ; H01L43/08 ; H01L43/10
摘要：
A semiconductor device includes a memory cell array, which further includes an array of first magnetic memory cells and an array of second magnetic memory cells. Each of the first magnetic memory cells includes a first magnetic tunnel junction structure having a reversible resistance state, and each of the second magnetic memory cells includes a second magnetic tunnel junction structure having a one-time programmable (OTP) resistance state.
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