Invention Grant
- Patent Title: Compositions and processes for depositing carbon-doped silicon-containing films
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Application No.: US15233018Application Date: 2016-08-10
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Publication No.: US10319584B2Publication Date: 2019-06-11
- Inventor: Manchao Xiao , Xinjian Lei , Ronald Martin Pearlstein , Haripin Chandra , Eugene Jospeh Karwacki, Jr. , Bing Han , Mark Leonard O'Neill
- Applicant: Air Products and Chemicals, Inc.
- Applicant Address: US AZ Tempe
- Assignee: VERSUM MATERIALS US, LLC
- Current Assignee: VERSUM MATERIALS US, LLC
- Current Assignee Address: US AZ Tempe
- Agent Joseph D. Rossi
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C07F7/10 ; C07F7/08 ; C23C16/30 ; C23C16/34 ; C23C16/40 ; C23C16/455 ; C09D5/00 ; C09D7/63
Abstract:
Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
Public/Granted literature
- US20160351389A1 Compositions and Processes for Depositing Carbon-Doped Silicon-Containing Films Public/Granted day:2016-12-01
Information query
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