Invention Grant
- Patent Title: Light-emitting device having III-V semiconductor gain section coupled to whistle-geometry tunable filter
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Application No.: US15741230Application Date: 2016-06-29
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Publication No.: US10320149B2Publication Date: 2019-06-11
- Inventor: Marek Osinski , Frédéric Grillot
- Applicant: INSTITUT MINES-TELECOM , UNIVERSITY OF NEW MEXICO
- Applicant Address: US NM Albuquerque
- Assignee: STC.UNM
- Current Assignee: STC.UNM
- Current Assignee Address: US NM Albuquerque
- Agency: Vogt IP
- Agent Keith A. Vogt
- Priority: EP15174743 20150701
- International Application: PCT/EP2016/065125 WO 20160629
- International Announcement: WO2017/001466 WO 20170105
- Main IPC: H01S5/10
- IPC: H01S5/10 ; H01S5/06 ; H01S5/14 ; H01S5/022 ; H01S5/068 ; H01S5/125 ; H01S5/343 ; H01S5/02

Abstract:
The invention concerns a wavelength tunable semiconductor laser comprising a laser gain section (510) optically coupled to an underlying optical waveguide (520). According to an embodiment of the invention, a first and a second passive microring resonators (530, 560) having a whistle geometry, are arranged on both sides of the laser gain section and evanescently coupled with the optical waveguide (520). Highly reflective broadband mirrors (541, 571) are provided at the free ends of optical waveguide branches (240, 270) tangentially connected to the microring resonators. The first and second passive microrings resonators provide an optical feedback to the laser gain section and allow to select the desired wavelength. The laser structure can be implemented according to a III-V/Si technology.
Public/Granted literature
- US20180191134A1 Light-Emitting Device Having III-V Semiconductor Gain Section Coupled to Whistle-Geometry Tunable Filter Public/Granted day:2018-07-05
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