A photographic mask is provided in the present disclosure. The photographic mask includes a silicon-on-insulator (SOI) base and a stepped opening formed in the SOI base. The SOI base includes a silicon substrate, a median layer and a silicon layer, the median layer is arranged between the insulator substrate and the insulator layer. The stepped opening includes a first opening portion and a second opening portion, the first opening portion penetrates through the silicon layer and has a first opening area; the second opening portion at least penetrates through the silicon substrate and is aligned with the first opening portion. The second opening portion has a second opening area greater than the first opening area of the first opening portion. The present disclosure further provides a method for making a photographic mask.