Invention Grant
- Patent Title: Method for post chemical mechanical polishing clean
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Application No.: US15590004Application Date: 2017-05-08
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Publication No.: US10332741B2Publication Date: 2019-06-25
- Inventor: Yi-Liang Ye , Kuang-Hsiu Chen , Chun-Wei Yu , Yu-Ren Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/66 ; H01L29/00 ; H01L21/321
Abstract:
A method for post chemical mechanical polishing clean is provided in the present invention, which include the steps of providing a substrate, performing a chemical mechanical polishing process, and performing a plurality of cleaning processes sequentially substrate using solutions of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) with different ratios and at different temperatures.
Public/Granted literature
- US20180323058A1 METHOD FOR POST CHEMICAL MECHANICAL POLISHING CLEAN Public/Granted day:2018-11-08
Information query
IPC分类:
