Invention Grant
- Patent Title: Integrated circuits (ICs) on a glass substrate
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Application No.: US15380800Application Date: 2016-12-15
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Publication No.: US10332911B2Publication Date: 2019-06-25
- Inventor: Shiqun Gu , Daeik Daniel Kim , Matthew Michael Nowak , Jonghae Kim , Changhan Hobie Yun , Je-Hsiung Jeffrey Lan , David Francis Berdy
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated-Toler
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L23/66 ; H01L27/12 ; H01L29/10 ; H01L29/66 ; H01L21/304 ; H01L21/306 ; H01L21/762 ; H01L21/768 ; H01L23/498 ; H01L23/528 ; H01L27/088 ; H01L27/092 ; H01L21/8234
Abstract:
An integrated circuit (IC) includes a glass substrate and a buried oxide layer. The IC additionally includes a first semiconductor device coupled to the glass substrate. The first semiconductor device includes a first gate and a first portion of a semiconductive layer coupled to the buried oxide layer. The first gate is located between the glass substrate and the first portion of the semiconductive layer and between the glass substrate and the buried oxide layer. The IC additionally includes a second semiconductor device coupled to the glass substrate. The second semiconductor device includes a second gate and a second portion of the semiconductive layer. The second gate is located between the glass substrate and the second portion of the semiconductive layer. The first portion is discontinuous from the second portion.
Public/Granted literature
- US20170098663A1 INTEGRATED CIRCUITS (ICS) ON A GLASS SUBSTRATE Public/Granted day:2017-04-06
Information query
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