A digitally controlled varactor device comprising: a set of bulk nMOS field effect transistors bulk tied to a ground, the set bulk nMOS field effect transistors having: a first transistor including: a source coupled to a DC voltage source; and a gate coupled to a digitally controlled oscillator; a second transistor including: a source coupled to the DC voltage source; and a gate coupled to the digitally controlled oscillator; and a third transistor including: a source coupled to a drain of the first transistor; and a drain coupled to a drain of the second transistor. The transistors in the digitally controlled varactor may be FDSOI nMOS devices with backgate coupled to a DC voltage source.