Invention Grant
- Patent Title: Vertical quantum transistor
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Application No.: US15707258Application Date: 2017-09-18
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Publication No.: US10332982B2Publication Date: 2019-06-25
- Inventor: Alexis Gauthier , Guillaume C. Ribes
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Crowe & Dunlevy
- Priority: FR1752371 20170322
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/12 ; H01L49/00 ; H01L29/78 ; H01L21/28 ; H01L29/423 ; H01L21/308

Abstract:
A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicinity of the channel region.
Public/Granted literature
- US20180277659A1 VERTICAL QUANTUM TRANSISTOR Public/Granted day:2018-09-27
Information query
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