- Patent Title: Terahertz laser, terahertz source and use of such a terahertz laser
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Application No.: US15752976Application Date: 2016-08-18
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Publication No.: US10333267B2Publication Date: 2019-06-25
- Inventor: Jean-François Lampin , Antoine Pagies
- Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , Universite de Lille
- Applicant Address: FR Paris FR Lille
- Assignee: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE,UNIVERSITE DE LILLE
- Current Assignee: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE,UNIVERSITE DE LILLE
- Current Assignee Address: FR Paris FR Lille
- Agency: Pearne & Gordon LLP
- Priority: FR1557827 20150820
- International Application: PCT/EP2016/069622 WO 20160818
- International Announcement: WO2017/029363 WO 20170223
- Main IPC: H01S1/06
- IPC: H01S1/06 ; H01S3/22 ; H01S5/00 ; H01S3/223 ; H01S3/0941 ; H01S3/0943 ; F21V8/00 ; H01S5/34

Abstract:
A terahertz laser suitable for emitting at least one first electromagnetic radiation, a first emission frequency of which is between 700 and 1200 GHz. The laser comprises an infrared laser source and a resonant cavity arranged to be optically pumped by the infrared laser source, the resonant cavity containing ammonia gas as an amplifier medium and having at least one configuration in which the resonant cavity is a resonant cavity at the first emission frequency. The infrared laser source is a continuous semiconductor laser source capable of exciting molecules of the amplifier medium from an initial energy level to at least one first excited energy level, the molecules of the amplifier medium placed in the first energy level being able to relax through a pure inversion transition for which the relaxation energy corresponds to the first emission frequency.
Public/Granted literature
- US20180254596A1 TERAHERTZ LASER, TERAHERTZ SOURCE AND USE OF SUCH A TERAHERTZ LASER Public/Granted day:2018-09-06
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