Invention Grant
- Patent Title: Underlying absorbing or conducting layer for Ebeam direct write (EBDW) lithography
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Application No.: US15528329Application Date: 2015-06-18
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Publication No.: US10338474B2Publication Date: 2019-07-02
- Inventor: Shakul Tandon , Yan A. Borodovsky , Charles H. Wallace , Paul A. Nyhus
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- International Application: PCT/US2015/036502 WO 20150618
- International Announcement: WO2016/114815 WO 20160721
- Main IPC: G03F7/09
- IPC: G03F7/09 ; G03F7/11 ; G03F7/20 ; H01L21/027 ; H01L21/3213 ; H01L21/311 ; H01L21/8234
Abstract:
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. Particular embodiments are directed to implementation of an underlying absorbing and/or conducting layer for ebeam direct write (EBDW) lithography.
Public/Granted literature
- US20170338105A1 Underlying Absorbing or Conducting Layer for Ebeam Direct Write (EBDW) Lithography Public/Granted day:2017-11-23
Information query
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