Invention Grant
- Patent Title: Semiconductor wafer surface protection film and method for manufacturing semiconductor device
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Application No.: US15741564Application Date: 2016-07-01
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Publication No.: US10340172B2Publication Date: 2019-07-02
- Inventor: Jun Kamada , Noboru Kawasaki , Shinichi Usugi , Makoto Sukegawa , Jin Kinoshita , Kouji Igarashi , Akimitsu Morimoto
- Applicant: MITSUI CHEMICALS TOHCELLO, INC.
- Applicant Address: JP Chiyoda-Ku
- Assignee: MITSUI CHEMICALS TOHCELLO, INC.
- Current Assignee: MITSUI CHEMICALS TOHCELLO, INC.
- Current Assignee Address: JP Chiyoda-Ku
- Agency: Buchanan, Ingersoll & Rooney PC
- Priority: JP2015-134596 20150703
- International Application: PCT/JP2016/003156 WO 20160701
- International Announcement: WO2017/006549 WO 20170112
- Main IPC: C09J7/30
- IPC: C09J7/30 ; B32B27/00 ; B32B27/30 ; H01L21/67 ; C09J133/06 ; C09J133/10 ; C09J133/12 ; C09J201/02 ; H01L21/283 ; H01L21/304 ; H01L21/683 ; H01L21/687

Abstract:
This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G′bmin of the storage elastic modulus G′b in the range of 25° C. to less than 250° C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G′b250 at 250° C. of 0.005 MPa or above, and a temperature at which G′bmin is exhibited of 50-150° C. The adhesive surface layer C has a minimum value G′cmin of the storage elastic modulus G′c in the range of 25° C. to less than 250° C. of 0.03 MPa.
Public/Granted literature
- US20180197764A1 SEMICONDUCTOR WAFER SURFACE PROTECTION FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2018-07-12
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