Invention Grant
- Patent Title: Source and drain epitaxial semiconductor material integration for high voltage semiconductor devices
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Application No.: US15689565Application Date: 2017-08-29
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Publication No.: US10340189B2Publication Date: 2019-07-02
- Inventor: Balasubramanian Pranatharthiharan , Junli Wang , Ruilong Xie
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/8234 ; H01L29/08 ; H01L27/088 ; H01L29/06 ; H01L29/66 ; H01L29/417 ; H01L29/78 ; H01L29/10 ; H01L21/84 ; H01L27/12
Abstract:
A method of forming a semiconductor device that includes providing a first set of fin structures having a first pitch, and a second set of fin structure having a second pitch, wherein the second pitch is greater than the first pitch. An epitaxial semiconductor material on the first and second set of fin structures. The epitaxial semiconductor material on the first fin structures is merging epitaxial material and the epitaxial material on the second fin structures is non-merging epitaxial material. A dielectric liner is formed atop the epitaxial semiconductor material that is present on the first and second sets of fin structures. The dielectric liner is removed from a portion of the non-merging epitaxial material that is present on the second set of fin structures. A bridging epitaxial semiconductor material is formed on exposed surfaces of the non-merging epitaxial material.
Public/Granted literature
- US20170365682A1 SOURCE AND DRAIN EPITAXIAL SEMICONDUCTOR MATERIAL INTEGRATION FOR HIGH VOLTAGE SEMICONDUCTOR DEVICES Public/Granted day:2017-12-21
Information query
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