- 专利标题： Semiconductor device and manufacture thereof
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申请号： US15863733申请日： 2018-01-05
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公开(公告)号： US10340342B2公开(公告)日： 2019-07-02
- 发明人: JianXiang Cai , YiQi Wang , WeiLi Zhao , XiaoFang Yang , JingGuo Jia
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- 申请人地址： CN CN
- 专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- 当前专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- 当前专利权人地址： CN CN
- 代理机构： Innovation Counsel LLP
- 优先权： CN201710037076 20170119
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L27/06 ; H01L21/8249 ; H01L29/66 ; H01L29/10 ; H01L29/739 ; H01L29/732 ; H01L29/06 ; H01L29/45
摘要：
A semiconductor device and its manufacturing method are presented. The semiconductor device includes a collection region, a base region adjacent to the collection region, an emission region adjacent to the base region, and a doped semiconductor layer on the emission region. The width of the doped semiconductor layer is larger than the width of the emission region, a conductive type (e.g., P-type or N-type) of the doped semiconductor layer is the same as a conductive type of the emission region. In this inventive concept, the width of the doped semiconductor layer on the emission region is larger than the width of the emission region, that equivalently increases the width of the emission region, which in turn increases the DC amplification factor (β) and therefore improves the overall performance of the semiconductor device.
公开/授权文献
- US20180204911A1 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 公开/授权日：2018-07-19
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