Invention Grant
- Patent Title: Integrated bootstrap high-voltage driver chip and technological structure thereof
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Application No.: US15779432Application Date: 2017-01-23
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Publication No.: US10340906B2Publication Date: 2019-07-02
- Inventor: Weifeng Sun , Yunwu Zhang , Kuo Yu , Jing Zhu , Shen Xu , Qinsong Qian , Siyang Liu , Shengli Lu , Longxing Shi
- Applicant: SOUTHEAST UNIVERSITY , SOUTHEAST UNIVERSITY-WUXI INTEGRATED CIRCUIT TECHNOLOGY RESEARCH INSTITUTE
- Applicant Address: CN Wuxi CN Wuxi
- Assignee: SOUTHEAST UNIVERSITY,SOUTHEAST UNIVERSITY-WUXI INTEGRATED CIRCUIT TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: SOUTHEAST UNIVERSITY,SOUTHEAST UNIVERSITY-WUXI INTEGRATED CIRCUIT TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: CN Wuxi CN Wuxi
- Agency: CBM Patent Consulting, LLC
- Priority: CN201610098736 20160223
- International Application: PCT/CN2017/072153 WO 20170123
- International Announcement: WO2017/143898 WO 20170831
- Main IPC: H02M3/07
- IPC: H02M3/07 ; H03K17/06 ; H03K17/16 ; H03K17/687 ; H03K19/0185 ; H01L27/07 ; H01L29/78 ; H01L29/423 ; H01L29/10
Abstract:
Parasitic high-voltage diodes implemented by integration technology in a high-voltage level shift circuit are used for charging a bootstrap capacitor CB, wherein a power supply end of the high voltage level shift circuit is a high-side floating power supply VB, and a reference ground is a floating voltage PGD that is controlled by a bootstrap control circuit. A first parasitic diode DB1 and a second parasitic diode DB2 are provided between the VB and the PGD. The bootstrap control circuit is controlled by a high-side signal and a low-side signal.
Public/Granted literature
- US20180262186A1 INTEGRATED BOOTSTRAP HIGH-VOLTAGE DRIVER CHIP AND TECHNOLOGICAL STRUCTURE THEREOF Public/Granted day:2018-09-13
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