专利检索 ap:"SOUTHEAST UNIVERSITY-WUXI INTEGRATED CIRCUIT TECHNOLOGY RESEARCH INSTITUTE" 第 1 页

1.

发明申请
INTEGRATED BOOTSTRAP HIGH-VOLTAGE DRIVER CHIP AND TECHNOLOGICAL STRUCTURE THEREOF 审中-公开

公开(公告)号：US20180262186A1

公开(公告)日：2018-09-13

申请号：US15779432

申请日：2017-01-23

申请人： SOUTHEAST UNIVERSITY , SOUTHEAST UNIVERSITY-WUXI INTEGRATED CIRCUIT TECHNOLOGY RESEARCH INSTITUTE

发明人： Weifeng SUN , Yunwu ZHANG , Kuo YU , Jing ZHU , Shen XU , Qinsong QIAN , Siyang LIU , Shengli LU , Longxing SHI

IPC分类号： H03K17/06 , H03K17/687 , H03K17/16

CPC分类号： H03K17/063 , H01L27/0727 , H01L29/1083 , H01L29/42368 , H01L29/7835 , H03K17/162 , H03K17/6871 , H03K19/0185 , H03K2217/0063 , H03K2217/0081

摘要： Parasitic high-voltage diodes implemented by integration technology in a high-voltage level shift circuit are used for charging a bootstrap capacitor CB, wherein a power supply end of the high voltage level shift circuit is a high-side floating power supply VB, and a reference ground is a floating voltage PGD that is controlled by a bootstrap control circuit. A first parasitic diode DB1 and a second parasitic diode DB2 are provided between the VB and the PGD. The bootstrap control circuit is controlled by a high-side signal and a low-side signal.

2.

发明授权
Integrated bootstrap high-voltage driver chip and technological structure thereof 有权

公开(公告)号：US10340906B2

公开(公告)日：2019-07-02

申请号：US15779432

申请日：2017-01-23

申请人： SOUTHEAST UNIVERSITY , SOUTHEAST UNIVERSITY-WUXI INTEGRATED CIRCUIT TECHNOLOGY RESEARCH INSTITUTE

发明人： Weifeng Sun , Yunwu Zhang , Kuo Yu , Jing Zhu , Shen Xu , Qinsong Qian , Siyang Liu , Shengli Lu , Longxing Shi

IPC分类号： H02M3/07 , H03K17/06 , H03K17/16 , H03K17/687 , H03K19/0185 , H01L27/07 , H01L29/78 , H01L29/423 , H01L29/10

摘要： Parasitic high-voltage diodes implemented by integration technology in a high-voltage level shift circuit are used for charging a bootstrap capacitor CB, wherein a power supply end of the high voltage level shift circuit is a high-side floating power supply VB, and a reference ground is a floating voltage PGD that is controlled by a bootstrap control circuit. A first parasitic diode DB1 and a second parasitic diode DB2 are provided between the VB and the PGD. The bootstrap control circuit is controlled by a high-side signal and a low-side signal.