Invention Grant
- Patent Title: Clock gating circuit operates at high speed
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Application No.: US16001701Application Date: 2018-06-06
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Publication No.: US10348299B2Publication Date: 2019-07-09
- Inventor: Hyunchul Hwang , Minsu Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2015-0088399 20150622
- Main IPC: H03K19/00
- IPC: H03K19/00 ; G06F1/3237

Abstract:
A clock gating circuit includes a first precharge unit charging a first node based on a clock signal, a second precharge unit charging a second node based on the clock signal, a first discharge unit discharging the first node based on the clock signal, a second discharge unit discharging the second node based on the clock signal, a first cross-coupled maintain unit maintaining the first node at a charge state according to a voltage level of the second node, a second cross-coupled maintain unit maintaining the second node at a charge state according to a voltage level of the first node, and a control unit controlling the first and second discharge units to discharge the first node or the second node on the basis of a clock enable signal.
Public/Granted literature
- US20180287612A1 CLOCK GATING CIRCUIT OPERATES AT HIGH SPEED Public/Granted day:2018-10-04
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