Invention Grant
- Patent Title: Magnetoelectric random access memory array and methods of operating the same
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Application No.: US15728840Application Date: 2017-10-10
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Publication No.: US10354710B2Publication Date: 2019-07-16
- Inventor: Christopher Petti , Neil Robertson , Abhijit Bandyopadhyay
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group, PLLC
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C11/02

Abstract:
A memory cell includes a VCMA magnetoelectric memory element and a two-terminal selector element connected in series to the magnetoelectric memory element.
Public/Granted literature
- US20190027201A1 MAGNETOELECTRIC RANDOM ACCESS MEMORY ARRAY AND METHODS OF OPERATING THE SAME Public/Granted day:2019-01-24
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