Invention Grant
- Patent Title: Method for formation of a transition metal dichalcogenide (TMDC) material layer
-
Application No.: US15819226Application Date: 2017-11-21
-
Publication No.: US10354868B2Publication Date: 2019-07-16
- Inventor: Salim El Kazzi , Clement Merckling
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP16200242 20161123
- Main IPC: C23C14/30
- IPC: C23C14/30 ; H01L21/02 ; C30B23/02 ; C30B23/06 ; C30B29/46 ; H01L21/687 ; C23C14/00 ; C23C14/06 ; C23C14/54 ; C30B23/00 ; H01L21/67
Abstract:
A method for formation of a transition metal dichalcogenide (TMDC) material layer on a substrate arranged in a process chamber of a molecular beam epitaxy tool is provided. The method includes evaporating metal from a solid metal source, forming a chalcogen-including gas-plasma, and introducing the evaporated metal and the chalcogen-including gas-plasma into the process chamber thereby forming a TMDC material layer on the substrate.
Public/Granted literature
- US20180144935A1 Method for Formation of a Transition Metal Dichalcogenide (TMDC) Material Layer Public/Granted day:2018-05-24
Information query
IPC分类:
