Invention Grant
- Patent Title: Floating gate memory cells in vertical memory
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Application No.: US15980503Application Date: 2018-05-15
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Publication No.: US10355008B2Publication Date: 2019-07-16
- Inventor: Charles H. Dennison , Akira Goda , John Hopkins , Fatma Arzum Simsek-Ege , Krishna K. Parat
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L29/66 ; H01L27/11578 ; H01L21/28
Abstract:
Floating gate memory cells in vertical memory. A control gate is formed between a first tier of dielectric material and a second tier of dielectric material. A floating gate is formed between the first tier of dielectric material and the second tier of dielectric material, wherein the floating gate includes a protrusion extending towards the control gate. A charge blocking structure is formed between the floating gate and the control gate, wherein at least a portion of the charge blocking structure wraps around the protrusion.
Public/Granted literature
- US20180350827A1 FLOATING GATE MEMORY CELLS IN VERTICAL MEMORY Public/Granted day:2018-12-06
Information query
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