Invention Grant
- Patent Title: Single-electron transistor with self-aligned coulomb blockade
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Application No.: US15988375Application Date: 2018-05-24
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Publication No.: US10355118B2Publication Date: 2019-07-16
- Inventor: Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Jennifer Davis
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/66 ; H01L21/306 ; H01L21/02 ; H01L29/10 ; H01L29/165 ; H01L29/08 ; H01L29/423 ; H01L29/06 ; B82Y10/00 ; H01L29/12
Abstract:
Semiconductor devices include a thin channel region formed on a buried insulator. A source and drain region is formed on the buried insulator, separated from the channel region by notches. A gate structure is formed on the thin channel region.
Public/Granted literature
- US20180277670A1 SINGLE-ELECTRON TRANSISTOR WITH SELF-ALIGNED COULOMB BLOCKADE Public/Granted day:2018-09-27
Information query
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