Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the same

发明授权

US10355205B2 Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the same 有权

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专利标题： Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the same
申请号： US15528674

申请日： 2014-12-18
公开(公告)号： US10355205B2

公开(公告)日： 2019-07-16
发明人: Prashant Majhi , Ravi Pillarisetty , Niloy Mukherjee , Uday Shah , Elijah V. Karpov , Brian S. Doyle , Robert S. Chau
申请人： Prashant Majhi , Ravi Pillarisetty , Niloy Mukherjee , Uday Shah , Elijah V. Karpov , Brian S. Doyle , Robert S. Chau
申请人地址： US CA Santa Clara
专利权人： Intel Corporation
当前专利权人： Intel Corporation
当前专利权人地址： US CA Santa Clara
代理机构： Grossman, Tucker, Perreault & Pfleger, PLLC
国际申请： PCT/US2014/071173 WO 20141218
国际公布： WO2016/099511 WO 20160623
主分类号： H01L29/08
IPC分类号： H01L29/08 ; H01L45/00

Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the same

摘要：

Resistive memory cells are described. In some embodiments, the resistive memory cells include a switching layer having an inner region in which one or more filaments is formed. In some instances, the filaments is/are formed only within the inner region of the switching layer. Methods of making such resistive memory cells and devices including such cells are also described.

公开/授权文献

US20170271583A1 RESISTIVE MEMORY CELLS INCLUDING LOCALIZED FILAMENTARY CHANNELS, DEVICES INCLUDING THE SAME, AND METHODS OF MAKING THE SAME 公开/授权日：2017-09-21

信息查询

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/06	..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的
H01L29/08	...具有连接到1个通有待整流、放大或切换的电流的电极上去的半导体区域的；并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的