- 专利标题: Semiconductor device and semiconductor logic device
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申请号: US15723278申请日: 2017-10-03
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公开(公告)号: US10360963B2公开(公告)日: 2019-07-23
- 发明人: Byong Guk Park , Seung Heon Baek , Kyung Woong Park
- 申请人: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- 申请人地址: KR Daejeon
- 专利权人: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人地址: KR Daejeon
- 代理机构: Lando & Anastasi, LLP
- 优先权: KR10-2016-0137412 20161021
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C11/16 ; H01L27/22 ; H01L43/08 ; H03K19/18 ; G11C11/18 ; G11C11/56 ; H01L43/06 ; H03K19/20
摘要:
The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
公开/授权文献
- US20180114557A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LOGIC DEVICE 公开/授权日:2018-04-26