An embodiment includes a semiconductor device, comprising: a substrate; a continuous diffusion region disposed on the substrate; a first gate structure disposed on the continuous diffusion region; a second gate structure disposed on the continuous diffusion region; an isolation gate structure disposed between the first gate structure and the second gate structure and disposed adjacent to the both the first gate structure and the second gate structure; a first diffusion region of the continuous diffusion region disposed between the first gate structure and the isolation gate structure; a second diffusion region of the continuous diffusion region disposed between the second gate structure and the isolation gate structure; a conductive layer disposed on the first and second diffusion regions; and an isolation gate contact disposed over the isolation gate structure and electrically insulated from the first diffusion region.