Invention Grant
- Patent Title: Power amplifier circuit
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Application No.: US16002457Application Date: 2018-06-07
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Publication No.: US10361664B2Publication Date: 2019-07-23
- Inventor: Toshiki Matsui , Kenji Sasaki , Fumio Harima
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F1/02 ; H03F3/21 ; H03F3/19 ; H01L29/737 ; H01L29/73

Abstract:
A power amplifier circuit is capable of restraining uneven temperature distribution among a plurality of unit transistors while restraining the deterioration of the characteristics of the power amplifier circuit. The power amplifier circuit includes: a first transistor group which includes a plurality of unit transistors and which amplifies an input signal and outputs an amplified signal; a bias circuit which supplies a bias current or a bias voltage to a base or a gate of each unit transistor of the first transistor group; a plurality of first resistive elements, each of which is connected between the base or the gate of each unit transistor of the first transistor group and an output of the bias circuit; and a plurality of second resistive elements, each of which is connected between an emitter or a source of each unit transistor of the first transistor group and a reference potential.
Public/Granted literature
- US20180358933A1 POWER AMPLIFIER CIRCUIT Public/Granted day:2018-12-13
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