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公开(公告)号：US11677367B2
公开(公告)日：2023-06-13
申请号：US17452669
申请日：2021-10-28
发明人： Yuri Honda , Satoshi Goto , Fumio Harima
CPC分类号： H03F3/245 , H03F1/565 , H03F3/195 , H03F2200/378 , H03F2200/423 , H03F2200/451 , H03F2200/537
摘要： A power amplifier circuit includes a power splitter, a first amplifier configured to output a first amplified signal from a first output terminal, and a second amplifier configured to output a second amplified signal from a second output terminal. The power amplifier circuit further includes a first termination circuit connected between the first output terminal and the second output terminal, a first transmission line, a second transmission line, a second termination circuit connected between another end of the first transmission line and another end of the second transmission line, and a power combiner.
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公开(公告)号：US11463060B2
公开(公告)日：2022-10-04
申请号：US17038988
申请日：2020-09-30
发明人： Yuri Honda , Fumio Harima , Yoshiki Kogushi , Shota Ishihara , Fuminori Morisawa
摘要： The present disclosure provides a power amplifier circuit capable of suppressing the occurrence of noises while enabling control of an output power level. The power amplifier circuit includes a first transistor that amplifies a first signal; a bias circuit that supplies a bias current or voltage based on a control signal to the first transistor; a second transistor to which a control current based on the control signal is supplied, which has an emitter or a source thereof connected to a collector or a drain of the first transistor, and from which a second signal obtained by amplifying the first signal is output; and a first feedback circuit provided between the collector or the drain of the second transistor and the base or the gate of the second transistor.
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公开(公告)号：US10291187B2
公开(公告)日：2019-05-14
申请号：US15904970
申请日：2018-02-26
发明人： Yuri Honda , Fumio Harima , Satoshi Tanaka
摘要： A power amplifier circuit includes an amplifier transistor having a base, a collector, a bias circuit, and a first resistance element connected between the base of the amplifier transistor and the bias circuit. The bias circuit includes a voltage generation circuit, a first transistor having a base to which a first direct-current voltage is supplied, and an emitter from which the bias current or voltage is supplied, a second transistor having a base to which a second direct-current voltage is supplied, and an emitter connected to the emitter of the first transistor, a signal supply circuit disposed between the base of the amplifier transistor and the base of the second transistor, and an impedance circuit disposed between the base of the first transistor and the base of the second transistor.
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公开(公告)号：US11616479B2
公开(公告)日：2023-03-28
申请号：US16839226
申请日：2020-04-03
发明人： Toshikazu Terashima , Fumio Harima , Makoto Itou , Satoshi Tanaka , Kazuo Watanabe , Satoshi Arayashiki , Chikara Yoshida
IPC分类号： H03F3/213 , H01L29/417 , H01L27/06 , H01L29/737 , H01L29/423 , H01L23/48
摘要： A power amplifier apparatus includes a semiconductor substrate, a plurality of first transistors on the semiconductor substrate, a plurality of second transistors, at least one collector terminal electrically connected to collectors of the plurality of first transistors, a first inductor having a first end electrically connected to the collector terminal and a second end electrically connected to a power supply potential, at least one emitter terminal electrically connected to emitters of the plurality of second transistors and adjacent to the collector terminal in a second direction, a second inductor having a first end electrically connected to the emitter terminal and a second end electrically connected to a reference potential, and at least one capacitor having a first end electrically connected to the collectors of the plurality of first transistors and a second end electrically connected to the emitters of the plurality of second transistors.
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公开(公告)号：US11601102B2
公开(公告)日：2023-03-07
申请号：US17168618
申请日：2021-02-05
发明人： Hiroaki Tokuya , Hideyuki Sato , Fumio Harima , Kenichi Shimamoto , Satoshi Tanaka , Takayuki Kawano , Ryoki Shikishima , Atsushi Kurokawa
摘要： A power amplifier circuit includes a first transistor disposed on a semiconductor substrate; a second transistor disposed on the semiconductor substrate and configured to supply a bias current based on a first current which is a part of a control current to the first transistor; a third transistor disposed on the semiconductor substrate and having a collector configured to be supplied with a second current which is a part of the control current and an emitter configured to output a third current based on the second current; a first bump electrically connected to an emitter of the first transistor and disposed so as to overlap a first disposition area in which the first transistor is disposed in plan view of the semiconductor substrate; and a second bump disposed so as to overlap a second disposition area in which the third transistor is disposed in the plan view.
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公开(公告)号：US11469187B2
公开(公告)日：2022-10-11
申请号：US16943243
申请日：2020-07-30
发明人： Hiroaki Tokuya , Masahiro Shibata , Akihiko Ozaki , Satoshi Goto , Fumio Harima , Atsushi Kurokawa
IPC分类号： H01L29/737 , H01L27/082 , H01L23/498 , H01L23/66 , H01L23/00
摘要： At least one unit transistor is arranged over a substrate. A first wiring as a path of current that flows to each unit transistor is arranged over the at least one unit transistor. An inorganic insulation film is arranged over the first wiring. At least one first opening overlapping a partial region of the first wiring in a plan view is provided in the inorganic insulation film. An organic insulation film is arranged over the inorganic insulation film. A second wiring coupled to the first wiring through the first opening is arranged over the organic insulation film and the inorganic insulation film. In a plan view, a region in which the organic insulation film is not arranged is provided outside a region in which the first wiring is arranged. The second wiring is in contact with the inorganic insulation film outside the region in which the first wiring is arranged.
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公开(公告)号：US10826453B2
公开(公告)日：2020-11-03
申请号：US16135787
申请日：2018-09-19
发明人： Yuri Honda , Fumio Harima , Yoshiki Kogushi , Shota Ishihara , Fuminori Morisawa
摘要： The present disclosure provides a power amplifier circuit capable of suppressing the occurrence of noises while enabling control of an output power level. The power amplifier circuit includes a first transistor that amplifies a first signal; a bias circuit that supplies a bias current or voltage based on a control signal to the first transistor; a second transistor to which a control current based on the control signal is supplied, which has an emitter or a source thereof connected to a collector or a drain of the first transistor, and from which a second signal obtained by amplifying the first signal is output; and a first feedback circuit provided between the collector or the drain of the second transistor and the base or the gate of the second transistor.
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公开(公告)号：US20170317066A1
公开(公告)日：2017-11-02
申请号：US15497663
申请日：2017-04-26
发明人： Yuri Honda , Fumio Harima , Kazuhito Nakai
IPC分类号： H01L27/02 , H01L27/082 , H01L23/48 , H01L27/088 , H03F3/19 , H03F3/21
CPC分类号： H01L27/0211 , H01L23/481 , H01L27/082 , H01L27/088 , H03F3/19 , H03F3/21 , H03F2200/408 , H03F2200/451
摘要： Provided is a semiconductor device with a reduced variation in temperature among a plurality of unit transistors. A semiconductor device includes: a semiconductor substrate; and a transistor group including at least one column in which a plurality of unit transistors are aligned and arranged along a first axis on the semiconductor substrate. A first column of the at least one column includes: a first group of transistors including two of the unit transistors that are adjacent to each other with a first distance therebetween, and a second group of transistors including two of the unit transistors that are adjacent to each other with a second distance therebetween, the first group of transistors is disposed at a position closer to a center of the first column along the first axis than the second group of transistors, and the first distance is larger than the second distance.
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公开(公告)号：US11677363B2
公开(公告)日：2023-06-13
申请号：US16883128
申请日：2020-05-26
发明人： Yuri Honda , Fumio Harima , Mitsuhiro Toya
CPC分类号： H03F3/21 , H03F1/0216 , H03F2200/451
摘要： A power amplifier circuit includes a first transistor configured to receive a first signal at a base, amplify the first signal, and output a second signal from a collector; and a bias circuit configured to supply a bias current to the base of the first transistor. The bias circuit includes a second transistor configured to supply a bias current to the base of the first transistor, a third transistor including a base connected to a base of the second transistor and a collector connected to a collector of the second transistor, and a fourth transistor including a base connected to an emitter of the third transistor and a collector connected to an emitter of the second transistor and configured to draw at least part of the bias current.
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公开(公告)号：US11569786B2
公开(公告)日：2023-01-31
申请号：US17197724
申请日：2021-03-10
发明人： Yuri Honda , Fumio Harima , Satoshi Tanaka
摘要： A power amplifier circuit includes an amplifier transistor having a base, a collector, a bias circuit, and a first resistance element connected between the base of the amplifier transistor and the bias circuit. The bias circuit includes a voltage generation circuit, a first transistor having a base to which a first direct-current voltage is supplied, and an emitter from which the bias current or voltage is supplied, a second transistor having a base to which a second direct-current voltage is supplied, and an emitter connected to the emitter of the first transistor, a signal supply circuit disposed between the base of the amplifier transistor and the base of the second transistor, and an impedance circuit disposed between the base of the first transistor and the base of the second transistor.
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