Invention Grant
- Patent Title: Memory device
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Application No.: US15705014Application Date: 2017-09-14
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Publication No.: US10373837B2Publication Date: 2019-08-06
- Inventor: Kun-Huang Yu , Shih-Yin Hsiao
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: CN201510521058 20150824
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L21/28 ; H01L29/423 ; H01L27/11536 ; H01L27/11539

Abstract:
Provided is a memory device including a first gate, a second gate and an inter-gate dielectric layer. The first gate is buried in a substrate. The second gate includes metal and is disposed on the substrate. The inter-gate dielectric layer is disposed between the first and second gates. The inter-gate dielectric layer comprises a high-k layer having a dielectric constant of greater than about 10.
Public/Granted literature
- US20180005835A1 MEMORY DEVICE Public/Granted day:2018-01-04
Information query
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