The present invention provides a magnetic random access memory (MRAM) structure, the MRAM structure includes a transistor including a gate, a source and a drain, and a magnetic tunnel junction (MTJ) device, the MTJ device includes at least one free layer, an insulating layer and a fixed layer, the insulating layer is disposed between the free layer and the fixed layer, and the free layer is located above the insulating layer. The free layer of the MTJ device is electrically connected to a bit line (BL). The fixed layer of the MTJ device is electrically connected to the source of the transistor, and the drain of the transistor is electrically connected to a sense line (SL). And a first conductive via, directly contacting the MTJ device, the material of the first conductive via comprises tungsten.