Invention Grant
- Patent Title: Semiconductor package with embedded MIM capacitor, and method of fabricating thereof
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Application No.: US15396817Application Date: 2017-01-03
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Publication No.: US10381302B2Publication Date: 2019-08-13
- Inventor: Shing-Yih Shih , Shih-Fan Kuan , Tieh-Chiang Wu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/00 ; H01L49/02 ; H01L23/498 ; H01L23/522 ; H01L25/065

Abstract:
An interposer includes a first redistribution layer, an organic substrate, a capacitor, a hard mask layer, a conductive pillar, and a second redistribution layer. The organic substrate is on the first redistribution layer. The capacitor is embedded in the organic substrate and includes a first electrode layer, a second electrode layer, and a capacitor dielectric layer between the first electrode layer and the second electrode layer. The first electrode layer electrically connects with the first redistribution layer. The hard mask layer is on the organic substrate. The conductive pillar is embedded in the organic substrate and the hard mask layer and electrically connects with the first redistribution layer. The second redistribution layer is on the hard mask layer and electrically connects with the second electrode layer and the conductive pillar.
Public/Granted literature
- US20180190582A1 SEMICONDUCTOR PACKAGE WITH EMBEDDED MIM CAPACITOR, AND METHOD OF FABRICATING THEREOF Public/Granted day:2018-07-05
Information query
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