发明授权
- 专利标题： Memory cell having magnetic tunnel junction and thermal stability enhancement layer
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申请号： US15656398申请日： 2017-07-21
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公开(公告)号： US10381553B2公开(公告)日： 2019-08-13
- 发明人: Mustafa Pinarbasi , Bartek Kardasz
- 申请人： Spin Memory, Inc.
- 申请人地址： US CA Fremont
- 专利权人： Spin Transfer Technologies, Inc.
- 当前专利权人： Spin Transfer Technologies, Inc.
- 当前专利权人地址： US CA Fremont
- 代理机构： Arnold & Porter Kaye Scholer LLP
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; H01L43/02 ; H01L43/10 ; H01L43/12 ; H01L27/22 ; G11C11/16
摘要：
A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be include a layer of CoFeB ferromagnetic material.
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