A method of reducing defects of a semiconductor substrate whereby the substrate is rinsed with an aqueous composition containing a gemini additive of the general formula I after the development of a photoresist or a photolithographic mask wherein X is a divalent group, R1, R2, R3 and R4 are substituted or unsubstituted monovalent groups, n is an integer from 1 to 5, or 1 to 10000 depending on R3 and R4, z is an integer, which is chosen so that the overall surfactant is electrically uncharged, and Z is a counter-ion.