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    Solubility enhancers on basis of allyl alcohol for aqueous surfactant formulations for enhanced oil recovery
    2.
    发明授权
    Solubility enhancers on basis of allyl alcohol for aqueous surfactant formulations for enhanced oil recovery 有权

    公开(公告)号：US11225857B2

    公开(公告)日：2022-01-18

    申请号：US16627473

    申请日：2018-07-11

    申请人： BASF SE

    发明人： Christian Bittner ,  Guenter Oetter ,  Jack F. Tinsley ,  Hans-Christian Raths ,  Marcel Patrik Kienle ,  Sebastian Alexander Weisse

    IPC分类号： E21B43/16 ,  C09K8/584

    摘要： The present invention relates to a method for the production of crude oil from subterranean, oil-bearing formations comprising at least the following steps of providing an aqueous surfactant composition comprising water and a surfactant mixture, injecting said surfactant composition into the subterranean, oil-bearing formation through at least one injection well, thereby reducing the crude oil-water interfacial tension to less than 0.1 mN/m, and withdrawing crude oil from the formation through at least one production well, wherein the surfactant mixture comprises at least a surfactant (A) having the general formula R1—O—(CH2CH(R2)O)a—(CH2CH(CH3)O)b—(CH2CH2O)c—R3—Y−M+ (I) and a solubility enhancer (B) having the general formula R4—O—(CH2CH(CH3)O)x—(CH2CH2O)y—R3—Y−M+ (II), wherein R1 to R4, a, b, c, x, y, Y and M have the meaning as defined the the description and claims. The invention further relates to said aqueous surfactant composition and methods for preparing the same as well as the use of solubility enhancer (B) for enhancing the solubility of anionic surfactant (A).

    DEFECT REDUCTION RINSE SOLUTION CONTAINING AMMONIUM SALTS OF SULFOESTERS
    3.
    发明申请
    DEFECT REDUCTION RINSE SOLUTION CONTAINING AMMONIUM SALTS OF SULFOESTERS 审中-公开

    公开(公告)号：US20180201885A1

    公开(公告)日：2018-07-19

    申请号：US15743848

    申请日：2016-07-01

    申请人： BASF SE

    发明人： Christian Bittner ,  Guenter Oetter ,  Andrei Honciuc ,  Andreas Klipp ,  Simon Braun

    IPC分类号： C11D11/00 ,  C11D1/12 ,  G03F7/42 ,  G03F7/40

    CPC分类号： C11D11/0047 ,  C11D1/123 ,  G03F7/40 ,  G03F7/425 ,  G03F7/426

    摘要： The present invention relates to the use of a composition comprising one or more ammonium salt(s) of one or more compounds selected from the group consisting of sulfobutanedioic acid diester(s), (sulfomethyl)-butanedioic acid diester(s), methyl-sulfobutanedioic acid diester(s), sulfoglutaric acid diester(s), and sulfotricarballic acid triester(s), for cleaning or rinsing a product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm and below. The invention also relates to a corresponding method of making a cleaned or rinsed product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below. The invention also relates to a solution with color of HAZEN number below 1000 and/or a turbidity in the range of from 0.08 to 10 NTU, wherein the solution comprises water and one or more ammonium salt(s) and optionally one or more organic solvent compounds. The invention also relates to a method of making a corresponding solution.

    COMPOSITIONS FOR ANTI PATTERN COLLAPSE TREATMENT COMPRISING GEMINI ADDITIVES
    4.
    发明申请
    COMPOSITIONS FOR ANTI PATTERN COLLAPSE TREATMENT COMPRISING GEMINI ADDITIVES 审中-公开
    用于包含GEMINI添加剂的抗皱纹治疗组合物

    公开(公告)号：US20150159123A1

    公开(公告)日：2015-06-11

    申请号：US14412737

    申请日：2013-07-01

    申请人： BASF SE

    发明人： Andreas Klipp ,  Andrei Honciuc ,  Guenter Oetter ,  Christian Bittner

    IPC分类号： C11D11/00 ,  G03F7/32 ,  G03F7/40 ,  C11D1/00 ,  C11D1/62 ,  G03F7/20 ,  C11D1/40

    CPC分类号： C11D11/0047 ,  C11D1/008 ,  C11D1/40 ,  C11D1/62 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/40

    摘要： A method of reducing defects of a semiconductor substrate whereby the substrate is rinsed with an aqueous composition containing a gemini additive of the general formula I after the development of a photoresist or a photolithographic mask wherein X is a divalent group, R1, R2, R3 and R4 are substituted or unsubstituted monovalent groups, n is an integer from 1 to 5, or 1 to 10000 depending on R3 and R4, z is an integer, which is chosen so that the overall surfactant is electrically uncharged, and Z is a counter-ion.

    摘要翻译： 一种降低半导体衬底的缺陷的方法，其中在开发光致抗蚀剂或光刻掩模之后，用包含通式I的双子添加剂的水性组合物漂洗衬底，其中X是二价基团，R1，R2，R3和 R4是取代或未取代的单价基团，n是1至5的整数，或1至10000个取决于R3和R4，z是整数，其被选择为使得整个表面活性剂是电不带电的，Z是反 - 离子。

    Defect reduction rinse solution containing ammonium salts of sulfoesters
    5.
    发明授权
    Defect reduction rinse solution containing ammonium salts of sulfoesters 有权

    公开(公告)号：US10538724B2

    公开(公告)日：2020-01-21

    申请号：US15743848

    申请日：2016-07-01

    申请人： BASF SE

    发明人： Christian Bittner ,  Guenter Oetter ,  Andrei Honciuc ,  Andreas Klipp ,  Simon Braun

    IPC分类号： C11D11/00 ,  C11D1/12 ,  G03F7/42 ,  G03F7/40

    摘要： The present invention relates to the use of a composition comprising one or more ammonium salt(s) of one or more compounds selected from the group consisting of sulfobutanedioic acid diester(s), (sulfomethyl)-butanedioic acid diester(s), methyl-sulfobutanedioic acid diester(s), sulfoglutaric acid diester(s), and sulfotricarballic acid triester(s), for cleaning or rinsing a product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm and below. The invention also relates to a corresponding method of making a cleaned or rinsed product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below. The invention also relates to a solution with color of HAZEN number below 1000 and/or a turbidity in the range of from 0.08 to 10 NTU, wherein the solution comprises water and one or more ammonium salt(s) and optionally one or more organic solvent compounds. The invention also relates to a method of making a corresponding solution.

    Cleavable additives for use in a method of making a semiconductor substrate
    7.
    发明授权
    Cleavable additives for use in a method of making a semiconductor substrate 有权

    公开(公告)号：US11742197B2

    公开(公告)日：2023-08-29

    申请号：US17044928

    申请日：2019-04-02

    申请人： BASF SE

    发明人： Andreas Klipp ,  Christian Bittner ,  Simon Braun ,  Guenter Oetter ,  Yeni Burk

    IPC分类号： H01L21/02 ,  C07C271/12

    CPC分类号： H01L21/02057 ,  C07C271/12

    摘要： The use of an organic compound as cleavable additive, preferably as cleavable surfactant, in the modification and/or treatment of at least one surface of a semiconductor substrate is described. Moreover, it is described a method of making a semiconductor substrate, comprising contacting at least one surface thereof with an organic compound, or with a composition comprising it, to treat or modify said surface, cleaving said organic compound into a set of fragments and removing said set of fragments from the contacted surface. More in particular, a method of cleaning or rinsing a semiconductor substrate or an intermediate semiconductor substrate is described. In addition, a compound is described which is suitable for the uses and methods pointed out above and which preferably is a cleavable surfactant.