公开(公告)号：US10538724B2

公开(公告)日：2020-01-21

申请号：US15743848

申请日：2016-07-01

Applicant: BASF SE

Inventor： Christian Bittner ,  Guenter Oetter ,  Andrei Honciuc ,  Andreas Klipp ,  Simon Braun

IPC: C11D11/00 ,  C11D1/12 ,  G03F7/42 ,  G03F7/40

Abstract: The present invention relates to the use of a composition comprising one or more ammonium salt(s) of one or more compounds selected from the group consisting of sulfobutanedioic acid diester(s), (sulfomethyl)-butanedioic acid diester(s), methyl-sulfobutanedioic acid diester(s), sulfoglutaric acid diester(s), and sulfotricarballic acid triester(s), for cleaning or rinsing a product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm and below. The invention also relates to a corresponding method of making a cleaned or rinsed product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below. The invention also relates to a solution with color of HAZEN number below 1000 and/or a turbidity in the range of from 0.08 to 10 NTU, wherein the solution comprises water and one or more ammonium salt(s) and optionally one or more organic solvent compounds. The invention also relates to a method of making a corresponding solution.

公开(公告)号：US10385295B2

公开(公告)日：2019-08-20

申请号：US14412737

申请日：2013-07-01

Applicant: BASF SE

Inventor： Andreas Klipp ,  Andrei Honciuc ,  Guenter Oetter ,  Christian Bittner

IPC: C11D1/62 ,  C11D11/00 ,  C11D1/40 ,  C11D1/00 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: A method of reducing defects of a semiconductor substrate whereby the substrate is rinsed with an aqueous composition containing a gemini additive of the general formula I after the development of a photoresist or a photolithographic mask wherein X is a divalent group, R1, R2, R3 and R4 are substituted or unsubstituted monovalent groups, n is an integer from 1 to 5, or 1 to 10000 depending on R3 and R4, z is an integer, which is chosen so that the overall surfactant is electrically uncharged, and Z is a counter-ion.

公开(公告)号：US20160238944A9

公开(公告)日：2016-08-18

申请号：US14652120

申请日：2013-12-04

Applicant: BASF SE

Inventor： Andreas Klipp ,  Andrei Honciuc ,  Günter Oetter ,  Christian Bittner

IPC: G03F7/42

CPC classification number: G03F7/422 ,  C11D1/835 ,  C11D1/94 ,  C11D11/0047 ,  G03F7/2041 ,  G03F7/405 ,  H01L21/02057 ,  H01L21/0273

Abstract: In a method of treating a substrate including patterns having line-space dimensions of 50 nm or below, the substrate is rinsed by an aqueous composition including at least one non-ionic surfactant A and at least one hydrophobizer B. The at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration. The hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5-95° compared to the contact angle of water to the substrate before such contacting.

公开(公告)号：US20160161846A1

公开(公告)日：2016-06-09

申请号：US14904018

申请日：2014-07-08

Applicant: BASF SE

Inventor： Andreas Klipp ,  Andrei Honciuc ,  Chu-Ya Yang

IPC: G03F1/82 ,  G03F7/32 ,  G03F7/20 ,  C11D1/00 ,  G03F1/24

CPC classification number: G03F1/82 ,  C11D1/004 ,  G03F1/22 ,  G03F1/24 ,  G03F1/68 ,  G03F7/20 ,  G03F7/32

Abstract: In a method for cleaning photo masks having patterns with smallest line-space dimensions below 200 nm, a surfactant composition A is used, wherein A contains at least three short-chain perfluorinated groups Rf selected from the group consisting of trifluoromethyl, pentafluoroethyl, 1-heptafluoropropyl, 2-heptafluoropropyl, and pentafluorosulfanyl and wherein A exhibits, at a 1% by weight aqueous solution, a static surface tension below 25 mN/m.

Abstract translation: 在具有小于200nm的线间距尺寸最小的图案的光掩模的方法中，使用表面活性剂组合物A，其中A包含至少三个短链全氟化基团，Rf选自三氟甲基，五氟乙基， 七氟丙基，2-七氟丙基和五氟硫烷基，其中A在1重量％的水溶液中表现出低于25mN / m的静态表面张力。

公开(公告)号：US20150192854A1

公开(公告)日：2015-07-09

申请号：US14413252

申请日：2013-07-12

Applicant: BASF SE

Inventor： Andreas Klipp ,  Andrei Honciuc ,  Sabrina Montero Pancera ,  Zoltan Baan

IPC: G03F7/32 ,  G03F7/20

CPC classification number: G03F7/32 ,  G03F7/2002 ,  G03F7/2041 ,  G03F7/322

Abstract: A composition comprising a quaternary ammonium compound for developing photoresists applied to semiconductor substrates is provided. A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices is also provided. The pattern collapse can be avoided by prevent swelling of the photoresist by using the improved composition.

Abstract translation: 提供一种包含用于显影应用于半导体衬底的光致抗蚀剂的季铵化合物的组合物。 还提供了一种用于制造集成电路器件，光学器件，微机械和机械精密器件的方法。 可以通过使用改进的组合物防止光致抗蚀剂的溶胀来避免图案塌陷。

公开(公告)号：US12024693B2

公开(公告)日：2024-07-02

申请号：US17044989

申请日：2019-03-25

Applicant: BASF SE

Inventor： Joannes Theodorus Valentinus Hoogboom ,  Andreas Klipp ,  Jhih Jheng Ke ,  Yi Ping Cheng

IPC: C09K13/00 ,  C11D7/26 ,  C11D7/32 ,  C11D7/34 ,  C11D7/50 ,  G03F7/42

CPC classification number: C11D7/34 ,  C09K13/00 ,  C11D7/263 ,  C11D7/3281 ,  C11D7/5009 ,  G03F7/426 ,  C11D2111/22

Abstract: Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the cleaning composition of the present invention and one or more oxidants. Furthermore, it is described the use of an imidazolidinethione in a composition for etching or partially etching of a layer or mask on the surface of a semiconductor substrate and/or for cleaning a semiconductor substrate.

公开(公告)号：US11168239B2

公开(公告)日：2021-11-09

申请号：US16860793

申请日：2020-04-28

Applicant: BASF SE

Inventor： Robert Reichardt ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC: H01L21/461 ,  H01L21/321 ,  H01L21/306 ,  H01L21/304 ,  H01L21/02 ,  C09K3/14 ,  C09G1/04 ,  C09G1/02 ,  C09G1/00

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US10647900B2

公开(公告)日：2020-05-12

申请号：US14905703

申请日：2014-07-01

Applicant: BASF SE

Inventor： Robert Reichardt ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC: C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US20180201885A1

公开(公告)日：2018-07-19

申请号：US15743848

申请日：2016-07-01

Applicant: BASF SE

Inventor： Christian Bittner ,  Guenter Oetter ,  Andrei Honciuc ,  Andreas Klipp ,  Simon Braun

IPC: C11D11/00 ,  C11D1/12 ,  G03F7/42 ,  G03F7/40

CPC classification number: C11D11/0047 ,  C11D1/123 ,  G03F7/40 ,  G03F7/425 ,  G03F7/426

Abstract: The present invention relates to the use of a composition comprising one or more ammonium salt(s) of one or more compounds selected from the group consisting of sulfobutanedioic acid diester(s), (sulfomethyl)-butanedioic acid diester(s), methyl-sulfobutanedioic acid diester(s), sulfoglutaric acid diester(s), and sulfotricarballic acid triester(s), for cleaning or rinsing a product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm and below. The invention also relates to a corresponding method of making a cleaned or rinsed product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below. The invention also relates to a solution with color of HAZEN number below 1000 and/or a turbidity in the range of from 0.08 to 10 NTU, wherein the solution comprises water and one or more ammonium salt(s) and optionally one or more organic solvent compounds. The invention also relates to a method of making a corresponding solution.

公开(公告)号：US20150159123A1

公开(公告)日：2015-06-11

申请号：US14412737

申请日：2013-07-01

Applicant: BASF SE

Inventor： Andreas Klipp ,  Andrei Honciuc ,  Guenter Oetter ,  Christian Bittner

IPC: C11D11/00 ,  G03F7/32 ,  G03F7/40 ,  C11D1/00 ,  C11D1/62 ,  G03F7/20 ,  C11D1/40

CPC classification number: C11D11/0047 ,  C11D1/008 ,  C11D1/40 ,  C11D1/62 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/40

Abstract: A method of reducing defects of a semiconductor substrate whereby the substrate is rinsed with an aqueous composition containing a gemini additive of the general formula I after the development of a photoresist or a photolithographic mask wherein X is a divalent group, R1, R2, R3 and R4 are substituted or unsubstituted monovalent groups, n is an integer from 1 to 5, or 1 to 10000 depending on R3 and R4, z is an integer, which is chosen so that the overall surfactant is electrically uncharged, and Z is a counter-ion.

Abstract translation: 一种降低半导体衬底的缺陷的方法，其中在开发光致抗蚀剂或光刻掩模之后，用包含通式I的双子添加剂的水性组合物漂洗衬底，其中X是二价基团，R1，R2，R3和 R4是取代或未取代的单价基团，n是1至5的整数，或1至10000个取决于R3和R4，z是整数，其被选择为使得整个表面活性剂是电不带电的，Z是反 - 离子。