Invention Grant
- Patent Title: Determining data states of memory cells
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Application No.: US16043259Application Date: 2018-07-24
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Publication No.: US10388384B2Publication Date: 2019-08-20
- Inventor: Tommaso Vali , Luca De Santis , Ramin Ghodsi
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C16/26 ; G06F11/07 ; G11C29/02 ; G11C16/04 ; G11C29/24

Abstract:
Methods of operating a memory include determining a voltage level of a plurality of voltage levels at which a memory cell is deemed to first activate in response to applying the to a control gate of that memory cell for each memory cell of a plurality of memory cells, determining a plurality of voltage level distributions from numbers of memory cells of a first subset of memory cells deemed to first activate at each voltage level of the plurality of voltage levels, determining a transition between a pair of voltage level distributions for each adjacent pair of voltage level distributions, and assigning a respective data state to each memory cell of a second subset of memory cells responsive to the determined voltage level at which that memory cell is deemed to first activate and respective voltage levels of the transitions for each adjacent pair of voltage level distributions.
Public/Granted literature
- US20190066804A1 DETERMINING DATA STATES OF MEMORY CELLS Public/Granted day:2019-02-28
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