Invention Grant
- Patent Title: Semiconductor device with adjacent source/drain regions connected by a semiconductor bridge, and method for fabricating the same
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Application No.: US15398788Application Date: 2017-01-05
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Publication No.: US10388791B2Publication Date: 2019-08-20
- Inventor: Seok-Hoon Kim , Bon-Young Koo , Nam-Kyu Kim , Woo-Bin Song , Byeong-Chan Lee , Su-Jin Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0091594 20130801
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/088 ; H01L29/08 ; H01L29/78 ; H01L21/8234 ; H01L29/66
Abstract:
A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.
Public/Granted literature
Information query
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